FQD630TF vs IRFR222 feature comparison

FQD630TF Rochester Electronics LLC

Buy Now Datasheet

IRFR222 Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC INFINEON TECHNOLOGIES AG
Part Package Code TO-252
Package Description DPAK-3
Pin Count 3
Reach Compliance Code unknown unknown
Avalanche Energy Rating (Eas) 163 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 7 A 3.8 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 28 A
Qualification Status COMMERCIAL
Surface Mount YES NO
Terminal Finish MATTE TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 2 7
ECCN Code EAR99
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 42 W

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