FQD24N08TF
vs
IRFR024NTRPBF
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
INFINEON TECHNOLOGIES AG
Part Package Code
TO-252
Package Description
DPAK-3
Pin Count
3
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
230 mJ
71 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
80 V
55 V
Drain Current-Max (ID)
19.6 A
17 A
Drain-source On Resistance-Max
0.06 Ω
0.075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
50 W
45 W
Pulsed Drain Current-Max (IDM)
78.4 A
68 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Factory Lead Time
17 Weeks, 5 Days
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Compare FQD24N08TF with alternatives
Compare IRFR024NTRPBF with alternatives