FQD1N60CTM
vs
FQD1N60CTM
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
End Of Life
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
ONSEMI
Package Description
LEAD FREE, DPAK-3
DPAK-3
Pin Count
3
Reach Compliance Code
unknown
not_compliant
Additional Feature
AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
33 mJ
33 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
1 A
1 A
Drain-source On Resistance-Max
11.5 Ω
11.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
4 A
4 A
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Matte Tin (Sn) - annealed
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Part Package Code
DPAK-3 / TO-252-3
Manufacturer Package Code
369AS
ECCN Code
EAR99
Samacsys Manufacturer
onsemi
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
28 W
Compare FQD1N60CTM with alternatives
Compare FQD1N60CTM with alternatives