FQD12P10TM-F085 vs FQD12P10TM_F085 feature comparison

FQD12P10TM-F085 onsemi

Buy Now Datasheet

FQD12P10TM_F085 onsemi

Buy Now Datasheet
Pbfree Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ON SEMICONDUCTOR ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 370 mJ 370 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 9.4 A 9.4 A
Drain-source On Resistance-Max 0.29 Ω 0.29 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 85 pF 85 pF
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 50 W 50 W
Pulsed Drain Current-Max (IDM) 37.6 A 37.6 A
Qualification Status Not Qualified Not Qualified
Reference Standard AEC-Q101 AEC-Q101
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 210 ns 210 ns
Turn-on Time-Max (ton) 370 ns 370 ns
Base Number Matches 2 2
Rohs Code Yes
Factory Lead Time 59 Weeks