FQB8N60CFTM
vs
STB3NB60-1
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
STMICROELECTRONICS
|
| Package Description |
D2PAK-3
|
IN-LINE, R-PSIP-T3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
unknown
|
compliant
|
| Additional Feature |
AVALANCHE RATED
|
|
| Avalanche Energy Rating (Eas) |
160 mJ
|
100 mJ
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
600 V
|
600 V
|
| Drain Current-Max (ID) |
6.26 A
|
3.3 A
|
| Drain-source On Resistance-Max |
1.5 Ω
|
3.6 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSIP-T3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
25 A
|
13.2 A
|
| Qualification Status |
COMMERCIAL
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| Part Package Code |
|
TO-262AA
|
| ECCN Code |
|
EAR99
|
| JEDEC-95 Code |
|
TO-262AA
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
80 W
|
|
|
|
Compare FQB8N60CFTM with alternatives
Compare STB3NB60-1 with alternatives