FQB27P06TM vs IRFR5305PBF feature comparison

FQB27P06TM onsemi

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IRFR5305PBF Infineon Technologies AG

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Pbfree Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ONSEMI INFINEON TECHNOLOGIES AG
Package Description D2PAK-3
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 50 Weeks
Samacsys Manufacturer onsemi Infineon
Avalanche Energy Rating (Eas) 560 mJ 280 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 55 V
Drain Current-Max (ID) 27 A 31 A
Drain-source On Resistance-Max 0.07 Ω 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 120 W 69 W
Pulsed Drain Current-Max (IDM) 108 A 110 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN OVER NICKEL
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Rohs Code Yes
Additional Feature AVALANCHE RATED, HIGH RELIABILITY

Compare FQB27P06TM with alternatives

Compare IRFR5305PBF with alternatives