FQB12N20TM
vs
FQB12N60CTM
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
FAIRCHILD SEMICONDUCTOR CORP
|
Part Package Code |
TO-263
|
|
Package Description |
D2PAK-3
|
LEAD FREE, D2PAK-3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
210 mJ
|
870 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
600 V
|
Drain Current-Max (ID) |
11.6 A
|
12 A
|
Drain-source On Resistance-Max |
0.28 Ω
|
0.65 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263AB
|
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e0
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
90 W
|
225 W
|
Pulsed Drain Current-Max (IDM) |
46.4 A
|
48 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
MATTE TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Moisture Sensitivity Level |
|
1
|
|
|
|
Compare FQB12N20TM with alternatives
Compare FQB12N60CTM with alternatives