FQB10N20CTM vs IPD90N06S306ATMA1 feature comparison

FQB10N20CTM Fairchild Semiconductor Corporation

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IPD90N06S306ATMA1 Infineon Technologies AG

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Package Description LEAD FREE, D2PAK-3 GREEN, TO-252, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 210 mJ 250 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 55 V
Drain Current-Max (ID) 9.5 A 90 A
Drain-source On Resistance-Max 0.36 Ω 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 72 W
Pulsed Drain Current-Max (IDM) 38 A 360 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Additional Feature ULTRA LOW RESISTANCE
JEDEC-95 Code TO-252AA

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