FQA18N50V2
vs
FDA20N50_F109
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
FAIRCHILD SEMICONDUCTOR CORP
|
Part Package Code |
TO-3P
|
TO-3PN
|
Package Description |
TO-3P, 3 PIN
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
330 mJ
|
1110 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
20 A
|
22 A
|
Drain-source On Resistance-Max |
0.265 Ω
|
0.23 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
277 W
|
280 W
|
Pulsed Drain Current-Max (IDM) |
80 A
|
88 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
MATTE TIN
|
MATTE TIN
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Pbfree Code |
|
Yes
|
Manufacturer Package Code |
|
3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
|
HTS Code |
|
8541.29.00.95
|
Additional Feature |
|
FAST SWITCHING
|
|
|
|
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