FMV12N50ES
vs
FMV12N50E
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Not Recommended
End Of Life
Ihs Manufacturer
FUJI ELECTRIC CO LTD
FUJI ELECTRIC CO LTD
Part Package Code
TO-220AB
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOW NOISE
LOW NOISE
Avalanche Energy Rating (Eas)
460.8 mJ
400 mJ
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
12 A
12 A
Drain-source On Resistance-Max
0.5 Ω
0.52 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
65 W
60 W
Pulsed Drain Current-Max (IDM)
48 A
48 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Compare FMV12N50ES with alternatives
Compare FMV12N50E with alternatives