FMI16N60E
vs
15N65G-T47-T
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
FUJI ELECTRIC CO LTD
|
UNISONIC TECHNOLOGIES CO LTD
|
Package Description |
IN-LINE, R-PSIP-T3
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW NOISE
|
|
Avalanche Energy Rating (Eas) |
554.8 mJ
|
637 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
650 V
|
Drain Current-Max (ID) |
16 A
|
15 A
|
Drain-source On Resistance-Max |
0.47 Ω
|
0.44 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSIP-T3
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
64 A
|
60 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
Yes
|
Part Package Code |
|
TO-247
|
JEDEC-95 Code |
|
TO-247
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare FMI16N60E with alternatives
Compare 15N65G-T47-T with alternatives