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FLM6472-8F vs FLM6472-4F feature comparison

FLM6472-8F FUJITSU Semiconductor Limited

Buy Now Datasheet

FLM6472-4F FUJITSU Semiconductor Limited

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FUJITSU SEMICONDUCTOR AMERICA INC FUJITSU SEMICONDUCTOR AMERICA INC
Package Description FLANGE MOUNT, R-CDFM-F2 FLANGE MOUNT, R-CDFM-F2
Pin Count 3 3
Manufacturer Package Code CASE IB CASE IB
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Case Connection SOURCE SOURCE
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 15 V 15 V
Drain Current-Max (ID) 2.6 A 1.3 A
FET Technology JUNCTION JUNCTION
Highest Frequency Band C BAND C BAND
JESD-30 Code R-CDFM-F2 R-CDFM-F2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode DEPLETION MODE DEPLETION MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Transistor Element Material GALLIUM ARSENIDE GALLIUM ARSENIDE
Base Number Matches 1 1
Transistors » RF Power Field-Effect Transistors
Transistors » RF Power Field-Effect Transistors

Compare FLM6472-8F with alternatives

Compare FLM6472-4F with alternatives