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FLM1213-6F vs FLM1213-4C feature comparison

FLM1213-6F SUMITOMO ELECTRIC Device Innovations Inc

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FLM1213-4C FUJITSU Semiconductor Limited

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer EUDYNA DEVICES INC FUJITSU LTD
Package Description FLANGE MOUNT, R-CDFM-F2 FLANGE MOUNT, R-CDFM-F2
Pin Count 2 2
Manufacturer Package Code CASE IA
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Case Connection SOURCE SOURCE
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 15 V 15 V
Drain Current-Max (ID) 2.1 A 1.3 A
FET Technology JUNCTION JUNCTION
Highest Frequency Band KU BAND KU BAND
JESD-30 Code R-CDFM-F2 R-CDFM-F2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode DEPLETION MODE DEPLETION MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE GALLIUM ARSENIDE
Base Number Matches 1 1
HTS Code 8541.29.00.95
Operating Temperature-Max 175 °C
Power Dissipation Ambient-Max 25 W
Transistors » RF Power Field-Effect Transistors
Transistors » RF Power Field-Effect Transistors

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