FLM0910-3F
vs
FLM0910-8F
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
FUJITSU SEMICONDUCTOR AMERICA INC
|
FUJITSU LTD
|
| Package Description |
FLANGE MOUNT, R-CDFM-F2
|
FLANGE MOUNT, R-CDFM-F2
|
| Pin Count |
4
|
2
|
| Manufacturer Package Code |
CASE IA
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
15 V
|
15 V
|
| Drain Current-Max (ID) |
1.1 A
|
|
| FET Technology |
JUNCTION
|
JUNCTION
|
| Highest Frequency Band |
KU BAND
|
KU BAND
|
| JESD-30 Code |
R-CDFM-F2
|
R-CDFM-F2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
| Base Number Matches |
1
|
1
|
| HTS Code |
|
8541.29.00.95
|
| Operating Temperature-Max |
|
175 °C
|
| Power Dissipation Ambient-Max |
|
42.8 W
|
| Transistor Application |
|
AMPLIFIER
|
|
|
|
Compare FLM0910-3F with alternatives
Compare FLM0910-8F with alternatives