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FLL200IB-1 vs FLL200IB-2 feature comparison

FLL200IB-1 FUJITSU Semiconductor Limited

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FLL200IB-2 SUMITOMO ELECTRIC Device Innovations Inc

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer FUJITSU SEMICONDUCTOR AMERICA INC EUDYNA DEVICES INC
Package Description FLANGE MOUNT, R-CDFM-F2 HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
Pin Count 3 2
Manufacturer Package Code CASE IB CASE IB
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Case Connection SOURCE SOURCE
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 15 V 15 V
Drain Current-Max (ID) 6 A 6 A
FET Technology JUNCTION JUNCTION
Highest Frequency Band L BAND L BAND
JESD-30 Code R-CDFM-F2 R-CDFM-F2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode DEPLETION MODE DEPLETION MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE GALLIUM ARSENIDE
Base Number Matches 4 4
Pbfree Code Yes
Rohs Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistors » RF Power Field-Effect Transistors
Transistors » RF Power Field-Effect Transistors

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