FK10VS-9 vs FK10VS-9 feature comparison

FK10VS-9 Mitsubishi Electric

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FK10VS-9 Powerex Power Semiconductors

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MITSUBISHI ELECTRIC CORP POWEREX INC
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 450 V 450 V
Drain Current-Max (ID) 10 A 10 A
Drain-source On Resistance-Max 0.92 Ω 0.92 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W 125 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
Rohs Code No
Part Package Code TO-220S
Pin Count 3
HTS Code 8541.29.00.95
JESD-609 Code e0
Power Dissipation Ambient-Max 125 W
Terminal Finish Tin/Lead (Sn/Pb)