FHX35LG
vs
NE76118-T1
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
FUJITSU LTD
|
NEC ELECTRONICS AMERICA INC
|
Package Description |
DISK BUTTON, O-CRDB-F4
|
PLASTIC, 18, 4 PIN
|
Pin Count |
4
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.95
|
|
Samacsys Manufacturer |
FUJITSU
|
|
Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
Case Connection |
SOURCE
|
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
4 V
|
4 V
|
FET Technology |
HIGH ELECTRON MOBILITY
|
METAL SEMICONDUCTOR
|
Highest Frequency Band |
KU BAND
|
S BAND
|
JESD-30 Code |
O-CRDB-F4
|
R-PDSO-G4
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
RECTANGULAR
|
Package Style |
DISK BUTTON
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
0.29 W
|
|
Power Gain-Min (Gp) |
8.5 dB
|
9.5 dB
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
FLAT
|
GULL WING
|
Terminal Position |
RADIAL
|
DUAL
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
Base Number Matches |
2
|
1
|
Drain Current-Max (ID) |
|
0.02 A
|
|
|
|
Compare FHX35LG with alternatives
Compare NE76118-T1 with alternatives