FFM107-M vs RGF1MHE3_B/I feature comparison

FFM107-M Formosa Microsemi Co Ltd

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RGF1MHE3_B/I Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer FORMOSA MICROSEMI CO LTD VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application GENERAL PURPOSE EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.3 V
JESD-30 Code R-PDSO-F2 R-PDSO-C2
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Recovery Time-Max 0.5 µs 0.5 µs
Surface Mount YES YES
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
Package Description R-PDSO-C2
Factory Lead Time 8 Weeks
Date Of Intro 2020-10-09
Samacsys Manufacturer Vishay
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT
JEDEC-95 Code DO-214BA
Reference Standard AEC-Q101
Reverse Current-Max 5 µA
Reverse Test Voltage 1000 V

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