FEPB6AT-E3/81
vs
MBRD660CT
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
VISHAY SEMICONDUCTORS
|
MOTOROLA INC
|
| Part Package Code |
D2PAK
|
|
| Package Description |
R-PSSO-G2
|
PLASTIC, DPAK-3
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT
|
FREE WHEELING DIODE
|
| Application |
EFFICIENCY
|
POWER
|
| Case Connection |
CATHODE
|
CATHODE
|
| Configuration |
COMMON CATHODE, 2 ELEMENTS
|
COMMON CATHODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.975 V
|
0.9 V
|
| JEDEC-95 Code |
TO-263AB
|
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
75 A
|
75 A
|
| Number of Elements |
2
|
2
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-65 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
245
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
50 V
|
60 V
|
| Reverse Recovery Time-Max |
0.035 µs
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Base Number Matches |
1
|
10
|
| Reverse Current-Max |
|
100 µA
|
| Technology |
|
SCHOTTKY
|
|
|
|
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