FDT457N vs STE36N50-DK feature comparison

FDT457N Fairchild Semiconductor Corporation

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STE36N50-DK STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP STMICROELECTRONICS
Part Package Code SOT-223 ISOTOP
Pin Count 4 4
Manufacturer Package Code MOLDED PACKAGE, SOT-223, 4 LEAD ISOTOP
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 500 V
Drain Current-Max (ID) 5 A 36 A
Drain-source On Resistance-Max 0.06 Ω 0.14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PUFM-X4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 16 A 144 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING UNSPECIFIED
Terminal Position DUAL UPPER
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 7 1
Package Description FLANGE MOUNT, R-PUFM-X4
Avalanche Energy Rating (Eas) 100 mJ
Reference Standard UL RECOGNIZED

Compare FDT457N with alternatives

Compare STE36N50-DK with alternatives