FDS7066ASN3
vs
FDS7066SN3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
SOT
SOT
Package Description
FLMP, SO-8
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
8
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
19 A
19 A
Drain-source On Resistance-Max
0.0048 Ω
0.0055 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e4
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
60 A
60 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
NICKEL PALLADIUM GOLD
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Case Connection
DRAIN
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max (Abs)
3 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare FDS7066ASN3 with alternatives
Compare FDS7066SN3 with alternatives