FDS6692A
vs
FDS6692A
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
ONSEMI
Part Package Code
SOT
SOIC-8
Package Description
ROHS COMPLIANT, SOP-8
SOP-8
Pin Count
8
Reach Compliance Code
unknown
compliant
Avalanche Energy Rating (Eas)
79 mJ
79 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
9 A
9 A
Drain-source On Resistance-Max
0.0115 Ω
0.0115 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
48 A
48 A
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Matte Tin (Sn) - annealed
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Manufacturer Package Code
751EB
ECCN Code
EAR99
Factory Lead Time
2 Days
Samacsys Manufacturer
onsemi
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
1.47 W
Compare FDS6692A with alternatives
Compare FDS6692A with alternatives