FDS4935A
vs
PHN210-TAPE-7
feature comparison
Pbfree Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ONSEMI
|
NXP SEMICONDUCTORS
|
Package Description |
SO-8
|
SMALL OUTLINE, R-PDSO-G8
|
Manufacturer Package Code |
751EB
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
16 Weeks
|
|
Samacsys Manufacturer |
onsemi
|
|
Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
7 A
|
3.5 A
|
Drain-source On Resistance-Max |
0.023 Ω
|
0.1 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
2
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
P-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
30 A
|
14 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
HTS Code |
|
8541.29.00.95
|
Power Dissipation Ambient-Max |
|
4 W
|
Turn-off Time-Max (toff) |
|
140 ns
|
Turn-on Time-Max (ton) |
|
40 ns
|
|
|
|
Compare FDS4935A with alternatives
Compare PHN210-TAPE-7 with alternatives