FDS4435
vs
SI4431CDY-T1-GE3
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
VISHAY SILICONIX
|
Part Package Code |
SOT
|
SOT
|
Package Description |
SO-8
|
HALOGEN FREE AND ROHS COMPLIANT, SOP-8
|
Pin Count |
8
|
8
|
Reach Compliance Code |
unknown
|
unknown
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
8.8 A
|
9 A
|
Drain-source On Resistance-Max |
0.02 Ω
|
0.032 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Qualification Status |
COMMERCIAL
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
PURE MATTE TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
2
|
ECCN Code |
|
EAR99
|
Samacsys Manufacturer |
|
Vishay
|
Feedback Cap-Max (Crss) |
|
145 pF
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Power Dissipation-Max (Abs) |
|
4.2 W
|
Pulsed Drain Current-Max (IDM) |
|
30 A
|
Turn-off Time-Max (toff) |
|
50 ns
|
Turn-on Time-Max (ton) |
|
191 ns
|
|
|
|
Compare FDS4435 with alternatives
Compare SI4431CDY-T1-GE3 with alternatives