FDP6035L vs IPP45N06S4L-08 feature comparison

FDP6035L Rochester Electronics LLC

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IPP45N06S4L-08 Infineon Technologies AG

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Pbfree Code Yes No
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB TO-220AB
Package Description TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Reach Compliance Code unknown not_compliant
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 150 mJ 97 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 60 V
Drain Current-Max (ID) 58 A 45 A
Drain-source On Resistance-Max 0.011 Ω 0.0079 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 175 A 180 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO NO
Terminal Finish TIN Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection DRAIN
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 71 W

Compare FDP6035L with alternatives

Compare IPP45N06S4L-08 with alternatives