FDD8770 vs NDB706AL feature comparison

FDD8770 Fairchild Semiconductor Corporation

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NDB706AL Texas Instruments

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP NATIONAL SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description ROHS COMPLIANT, DPAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Avalanche Energy Rating (Eas) 113 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V 60 V
Drain Current-Max (ID) 35 A 75 A
Drain-source On Resistance-Max 0.0055 Ω 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 115 W
Pulsed Drain Current-Max (IDM) 407 A 225 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Additional Feature LOGIC LEVEL COMPATIBLE
Feedback Cap-Max (Crss) 800 pF
Power Dissipation Ambient-Max 150 W
Turn-off Time-Max (toff) 550 ns
Turn-on Time-Max (ton) 640 ns

Compare FDD8770 with alternatives

Compare NDB706AL with alternatives