FDD6685_NL
vs
AP6679GS-HF
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
ADVANCED POWER ELECTRONICS CORP
|
Part Package Code |
TO-252
|
|
Package Description |
TO-252, 3 PIN
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count |
4
|
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
11 A
|
75 A
|
Drain-source On Resistance-Max |
0.02 Ω
|
0.009 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252
|
TO-263AB
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
52 W
|
|
Pulsed Drain Current-Max (IDM) |
100 A
|
300 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
|
|
|
Compare FDD6685_NL with alternatives
Compare AP6679GS-HF with alternatives