FDB6676 vs IPD90N06S4L06ATMA1 feature comparison

FDB6676 Fairchild Semiconductor Corporation

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IPD90N06S4L06ATMA1 Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 370 mJ 67 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 60 V
Drain Current-Max (ID) 75 A 90 A
Drain-source On Resistance-Max 0.006 Ω 0.0063 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 93 W
Pulsed Drain Current-Max (IDM) 240 A 360 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn85Pb15)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 8 1
Samacsys Manufacturer Infineon
Additional Feature ULTRA-LOW RESISTANCE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare FDB6676 with alternatives

Compare IPD90N06S4L06ATMA1 with alternatives