FDB6670SS62Z
vs
H7N0307LD
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
RENESAS ELECTRONICS CORP
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
LDPAK-3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
285 mJ
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
62 A
|
60 A
|
| Drain-source On Resistance-Max |
0.0085 Ω
|
0.0115 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-263AB
|
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSIP-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
IN-LINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
150 A
|
240 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Pin Count |
|
3
|
| JESD-609 Code |
|
e0
|
| Power Dissipation-Max (Abs) |
|
90 W
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare FDB6670SS62Z with alternatives
Compare H7N0307LD with alternatives