FDB6035L
vs
FQPF4N80
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
unknown
unknown
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
150 mJ
460 mJ
Case Connection
DRAIN
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
800 V
Drain Current-Max (ID)
58 A
2.2 A
Drain-source On Resistance-Max
0.011 Ω
3.6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
Moisture Sensitivity Level
NOT SPECIFIED
NOT APPLICABLE
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT APPLICABLE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
175 A
8.8 A
Qualification Status
COMMERCIAL
COMMERCIAL
Surface Mount
YES
NO
Terminal Finish
NOT SPECIFIED
MATTE TIN
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT APPLICABLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Part Package Code
TO-220F
Package Description
TO-220F, 3 PIN
Pin Count
3
JESD-609 Code
e3
Compare FDB6035L with alternatives
Compare FQPF4N80 with alternatives