FDB2670L86Z
vs
FDD2670
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
D2PAK
DPAK
Package Description
SMALL OUTLINE, R-PSSO-G2
DPAK-3
Pin Count
3
3
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
375 mJ
375 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
19 A
3.6 A
Drain-source On Resistance-Max
0.13 Ω
0.13 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-252
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
40 A
20 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Pbfree Code
Rohs Code
Manufacturer Package Code
TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
HTS Code
8541.29.00.95
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
70 W
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare FDB2670L86Z with alternatives
Compare FDD2670 with alternatives