FDB045AN08A0 vs 934056258127 feature comparison

FDB045AN08A0 Fairchild Semiconductor Corporation

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934056258127 NXP Semiconductors

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP NXP SEMICONDUCTORS
Part Package Code D2PAK TO-220AB
Package Description TO-263AB, 3 PIN FLANGE MOUNT, R-PSFM-T3
Pin Count 2 3
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 600 mJ 72 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V 55 V
Drain Current-Max (ID) 19 A 20 A
Drain-source On Resistance-Max 0.0045 Ω 0.081 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 245 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 310 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Pulsed Drain Current-Max (IDM) 81 A

Compare FDB045AN08A0 with alternatives

Compare 934056258127 with alternatives