FCH47N60F-F133 vs IPB60R099C6 feature comparison

FCH47N60F-F133 onsemi

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IPB60R099C6 Infineon Technologies AG

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Pbfree Code Yes Yes
Part Life Cycle Code Active Not Recommended
Ihs Manufacturer ONSEMI INFINEON TECHNOLOGIES AG
Part Package Code TO-247 3L D2PAK
Manufacturer Package Code 340CK
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Date Of Intro 2017-11-02
Samacsys Manufacturer onsemi Infineon
Avalanche Energy Rating (Eas) 1800 mJ 796 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 47 A 37.9 A
Drain-source On Resistance-Max 0.073 Ω 0.099 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 417 W 278 W
Pulsed Drain Current-Max (IDM) 141 A 112 A
Surface Mount NO YES
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 1260 ns
Turn-on Time-Max (ton) 880 ns
Base Number Matches 1 1
Rohs Code Yes
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Case Connection DRAIN
Moisture Sensitivity Level 1
Qualification Status Not Qualified

Compare FCH47N60F-F133 with alternatives

Compare IPB60R099C6 with alternatives