F25L08QA-100HG2S vs SST25VF080B-50-4I-QAF feature comparison

F25L08QA-100HG2S Elite Semiconductor Memory Technology Inc

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SST25VF080B-50-4I-QAF Silicon Storage Technology

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Part Life Cycle Code Active Transferred
Ihs Manufacturer ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC SILICON STORAGE TECHNOLOGY INC
Part Package Code SON SON
Package Description 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8 VSON, SOLCC8,.25
Pin Count 8 8
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Clock Frequency-Max (fCLK) 100 MHz 50 MHz
JESD-30 Code R-PDSO-N8 R-PDSO-N8
Length 6 mm 6 mm
Memory Density 8388608 bit 8388608 bit
Memory IC Type FLASH FLASH
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 8 8
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 1MX8 1MX8
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code HVSON HVSON
Package Equivalence Code SOLCC8,.25 SOLCC8,.25
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, VERY THIN PROFILE
Parallel/Serial SERIAL SERIAL
Programming Voltage 2.7 V 3 V
Seated Height-Max 0.8 mm 0.8 mm
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position DUAL DUAL
Type NOR TYPE NOR TYPE
Width 5 mm 5 mm
Write Protection HARDWARE/SOFTWARE HARDWARE/SOFTWARE
Base Number Matches 1 2
Rohs Code Yes
Data Retention Time-Min 100
Endurance 100000 Write/Erase Cycles
JESD-609 Code e4
Qualification Status Not Qualified
Serial Bus Type SPI
Standby Current-Max 0.00002 A
Supply Current-Max 0.03 mA
Terminal Finish NICKEL PALLADIUM GOLD

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Compare SST25VF080B-50-4I-QAF with alternatives