F1T4GR0
vs
BYV26B-TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
VISHAY SEMICONDUCTORS
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.3 V
1.3 V
JESD-30 Code
O-PALF-W2
E-LALF-W2
JESD-609 Code
e3
e2
Non-rep Pk Forward Current-Max
30 A
30 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
GLASS
Package Shape
ROUND
ELLIPTICAL
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
260
Rep Pk Reverse Voltage-Max
400 V
400 V
Reverse Recovery Time-Max
0.15 µs
0.03 µs
Surface Mount
NO
NO
Terminal Finish
TIN
Tin/Silver (Sn96.5Ag3.5)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
10
30
Base Number Matches
1
2
Pbfree Code
Package Description
E-LALF-W2
Pin Count
2
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Technology
AVALANCHE
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