F10F6N
vs
FDP14N60
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SHINDENGEN ELECTRIC MANUFACTURING CO LTD
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
SFM
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
TO-220, 3 PIN
Pin Count
3
3
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
600 V
Drain Current-Max (ID)
10 A
14 A
Drain-source On Resistance-Max
0.1 Ω
0.49 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
40 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Avalanche Energy Rating (Eas)
550 mJ
Case Connection
DRAIN
JEDEC-95 Code
TO-220AB
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Power Dissipation-Max (Abs)
300 W
Terminal Finish
Tin/Lead (Sn85Pb15)
Transistor Application
SWITCHING
Compare F10F6N with alternatives
Compare FDP14N60 with alternatives