ESH3BHV6G vs 1N5809D3A-JQRS.LVT2 feature comparison

ESH3BHV6G Taiwan Semiconductor

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1N5809D3A-JQRS.LVT2 TT Electronics Power and Hybrid / Semelab Limited

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SEMELAB LTD
Package Description SMC, 2 PIN R-CDSO-N2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature FREE WHEELING DIODE HIGH RELIABILITY
Application EFFICIENCY ULTRA FAST RECOVERY POWER
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-CDSO-N2
JESD-609 Code e3 e4
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 250
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.02 µs 0.05 µs
Surface Mount YES YES
Terminal Finish MATTE TIN GOLD
Terminal Form C BEND NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 2
Pin Count 2

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Compare 1N5809D3A-JQRS.LVT2 with alternatives