ESDA5V3L vs ESDA5V3LG feature comparison

ESDA5V3L Galaxy Microelectronics

Buy Now Datasheet

ESDA5V3LG Galaxy Microelectronics

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description SOT-23, 3 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 5.9 V 5.9 V
Breakdown Voltage-Min 5.3 V 5.3 V
Breakdown Voltage-Nom 5.6 V 5.6 V
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Capacitance-Min 220 pF 220 pF
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 1.25 V 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Non-rep Peak Rev Power Dis-Max 300 W 300 W
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 3 V 3 V
Reverse Current-Max 2 µA 2 µA
Reverse Test Voltage 3 V 3 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 1

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