ES3JBF
vs
S3J-T
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
MICRO COMMERCIAL COMPONENTS
|
Package Description |
R-PDSO-F2
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Application |
SUPER FAST RECOVERY
|
GENERAL PURPOSE
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1.7 V
|
1.2 V
|
JESD-30 Code |
R-PDSO-F2
|
R-PDSO-C2
|
Non-rep Pk Forward Current-Max |
100 A
|
100 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Output Current-Max |
3 A
|
3 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
240
|
Rep Pk Reverse Voltage-Max |
600 V
|
600 V
|
Reverse Current-Max |
10 µA
|
10 µA
|
Reverse Recovery Time-Max |
0.035 µs
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
FLAT
|
C BEND
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
Base Number Matches |
2
|
2
|
Breakdown Voltage-Min |
|
600 V
|
JEDEC-95 Code |
|
DO-214AB
|
JESD-609 Code |
|
e0
|
Moisture Sensitivity Level |
|
1
|
Reverse Test Voltage |
|
600 V
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare ES3JBF with alternatives
Compare S3J-T with alternatives