ES3JB
vs
S3JB-XX-TR30
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
TAITRON COMPONENTS INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Application
SUPER FAST RECOVERY
GENERAL PURPOSE
Breakdown Voltage-Min
600 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.7 V
1.15 V
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Pk Forward Current-Max
100 A
100 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Reference Standard
MIL-STD-202
Rep Pk Reverse Voltage-Max
600 V
600 V
Reverse Current-Max
10 µA
5 µA
Reverse Recovery Time-Max
0.035 µs
2.5 µs
Reverse Test Voltage
600 V
Surface Mount
YES
YES
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Base Number Matches
13
1
Package Description
R-PDSO-C2
JEDEC-95 Code
DO-214AA
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