ES3JB
vs
S3J-T
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Part Package Code |
SMB
|
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
|
| Application |
SUPER FAST RECOVERY
|
GENERAL PURPOSE
|
| Breakdown Voltage-Min |
600 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.7 V
|
1.15 V
|
| JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
| Non-rep Pk Forward Current-Max |
100 A
|
100 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Reference Standard |
MIL-STD-202
|
|
| Rep Pk Reverse Voltage-Max |
600 V
|
600 V
|
| Reverse Current-Max |
10 µA
|
10 µA
|
| Reverse Recovery Time-Max |
0.035 µs
|
|
| Reverse Test Voltage |
600 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
C BEND
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
13
|
2
|
| Package Description |
|
SMC, 2 PIN
|
| JEDEC-95 Code |
|
DO-214AB
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
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