ES2DFLRVG
vs
NRVUA110VT3G
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
ONSEMI
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Additional Feature |
FREE WHEELING DIODE
|
FREE WHEELING DIODE
|
Application |
SUPER FAST RECOVERY
|
ULTRA FAST RECOVERY POWER
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1 V
|
0.875 V
|
JESD-30 Code |
R-PDSO-F2
|
R-PDSO-J2
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Non-rep Pk Forward Current-Max |
40 A
|
50 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
175 °C
|
Operating Temperature-Min |
-55 °C
|
-65 °C
|
Output Current-Max |
2 A
|
2 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Rep Pk Reverse Voltage-Max |
200 V
|
100 V
|
Reverse Current-Max |
5 µA
|
2 µA
|
Reverse Recovery Time-Max |
0.035 µs
|
0.03 µs
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
Matte Tin (Sn) - annealed
|
Terminal Form |
FLAT
|
J BEND
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
SMA-2
|
Package Description |
|
SMA, 2 PIN
|
Manufacturer Package Code |
|
403D-02
|
Factory Lead Time |
|
10 Weeks
|
Samacsys Manufacturer |
|
onsemi
|
Breakdown Voltage-Min |
|
100 V
|
Case Connection |
|
NONE
|
Reference Standard |
|
AEC-Q101
|
Reverse Test Voltage |
|
100 V
|
|
|
|
Compare ES2DFLRVG with alternatives
Compare NRVUA110VT3G with alternatives