ES2BFSM2G vs MBRX2A0 feature comparison

ES2BFSM2G Taiwan Semiconductor

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MBRX2A0 Galaxy Microelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Date Of Intro 2020-04-15
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.95 V 0.85 V
JESD-30 Code R-PDSO-F2 R-PDSO-F2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 2 A 2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 1 µA 250 µA
Reverse Recovery Time-Max 0.035 µs
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Base Number Matches 1 2
Part Package Code SOD-123FL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology SCHOTTKY
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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