ES2ABF
vs
MBRXF250
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
GALAXY SEMI-CONDUCTOR CO LTD
Package Description
R-PDSO-F2
R-PDSO-F2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
GENERAL PURPOSE
GENERAL PURPOSE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.95 V
0.75 V
JESD-30 Code
R-PDSO-F2
R-PDSO-F2
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
2 A
2 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
50 V
50 V
Reverse Current-Max
5 µA
500 µA
Reverse Recovery Time-Max
0.035 µs
Surface Mount
YES
YES
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Base Number Matches
3
2
Technology
SCHOTTKY
Compare ES2ABF with alternatives
Compare MBRXF250 with alternatives