ES1GFSHM3G vs HS1GLR3 feature comparison

ES1GFSHM3G Taiwan Semiconductor

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HS1GLR3 Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Date Of Intro 2020-06-05
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V
JESD-30 Code R-PDSO-F2 R-PDSO-F2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Current-Max 1 µA
Reverse Recovery Time-Max 0.035 µs 0.05 µs
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Base Number Matches 1 1
Package Description SMA, 2 PIN
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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