ES1DR3G
vs
ES1DT/R
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
NXP SEMICONDUCTORS
|
Package Description |
GREEN, PLASTIC, SMA, 2 PIN
|
PLASTIC PACKAGE-2
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Samacsys Manufacturer |
Taiwan Semiconductor
|
|
Application |
GENERAL PURPOSE
|
ULTRA FAST RECOVERY
|
Case Connection |
UNSPECIFIED
|
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
JEDEC-95 Code |
DO-214AC
|
DO-214AC
|
JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Non-rep Pk Forward Current-Max |
30 A
|
25 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
175 °C
|
Operating Temperature-Min |
-55 °C
|
-65 °C
|
Output Current-Max |
1 A
|
1 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
|
Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
Reverse Recovery Time-Max |
0.035 µs
|
0.025 µs
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
C BEND
|
C BEND
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
DO-214AC
|
Pin Count |
|
2
|
Additional Feature |
|
LOW LEAKAGE CURRENT
|
Forward Voltage-Max (VF) |
|
1.1 V
|
Qualification Status |
|
Not Qualified
|
Reference Standard |
|
IEC-134
|
Reverse Current-Max |
|
5 µA
|
Reverse Test Voltage |
|
200 V
|
Technology |
|
AVALANCHE
|
|
|
|
Compare ES1DR3G with alternatives
Compare ES1DT/R with alternatives