ES1DALH
vs
FES1DEQ-7
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
DIODES INC
|
Package Description |
SMA, 2 PIN
|
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
Additional Feature |
FREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE
|
LOW POWER LOSS, LOW LEAKAGE CURRENT, FREE WHEELING DIODE
|
Application |
EFFICIENCY
|
EFFICIENCY
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
0.95 V
|
0.92 V
|
JESD-30 Code |
R-PDSO-F2
|
R-PDSO-F2
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Non-rep Pk Forward Current-Max |
30 A
|
30 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Output Current-Max |
1 A
|
1 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Reference Standard |
AEC-Q101
|
AEC-Q101; IATF16949
|
Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
Reverse Current-Max |
1 µA
|
5 µA
|
Reverse Recovery Time-Max |
0.035 µs
|
0.025 µs
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
Matte Tin (Sn)
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
1
|
1
|
Factory Lead Time |
|
8 Weeks
|
Samacsys Manufacturer |
|
Diodes Incorporated
|
Breakdown Voltage-Min |
|
200 V
|
JEDEC-95 Code |
|
DO-219AA
|
Peak Reflow Temperature (Cel) |
|
260
|
Reverse Test Voltage |
|
200 V
|
|
|
|
Compare ES1DALH with alternatives
Compare FES1DEQ-7 with alternatives