ES1BAL vs EGF1BHE3_B/I feature comparison

ES1BAL Taiwan Semiconductor

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EGF1BHE3_B/I Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD VISHAY INTERTECHNOLOGY INC
Package Description SMA, 2 PIN R-PDSO-C2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, HIGH RELIABILITY
Application EFFICIENCY EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.95 V 1 V
JESD-30 Code R-PDSO-F2 R-PDSO-C2
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 1 µA 5 µA
Reverse Recovery Time-Max 0.035 µs 0.05 µs
Surface Mount YES YES
Terminal Finish PURE TIN MATTE TIN
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
HTS Code 8541.10.00.80
Factory Lead Time 8 Weeks
Date Of Intro 2020-10-09
JEDEC-95 Code DO-214BA
JESD-609 Code e3
Peak Reflow Temperature (Cel) 250
Reference Standard AEC-Q101
Reverse Test Voltage 100 V
Time@Peak Reflow Temperature-Max (s) 30

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