ES1ALG vs M1G-T feature comparison

ES1ALG Taiwan Semiconductor

Buy Now Datasheet

M1G-T Rectron Semiconductor

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD RECTRON LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature LOW POWER LOSS LOW LEAKAGE CURRENT
Application EFFICIENCY GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.95 V 1 V
JESD-30 Code R-PDSO-F2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Current-Max 5 µA 1 µA
Reverse Recovery Time-Max 0.035 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
Date Of Intro 2018-09-17
Reverse Test Voltage 50 V

Compare ES1ALG with alternatives

Compare M1G-T with alternatives