ERD32-02
vs
1N5550
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
FUJI ELECTRIC CO LTD
|
SENSITRON SEMICONDUCTOR
|
| Package Description |
O-XALF-W2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Application |
FAST RECOVERY
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.92 V
|
1.2 V
|
| JESD-30 Code |
O-XALF-W2
|
O-XALF-W2
|
| Non-rep Pk Forward Current-Max |
150 A
|
150 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Operating Temperature-Min |
-40 °C
|
-65 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Current-Max |
50 µA
|
1 µA
|
| Reverse Recovery Time-Max |
0.1 µs
|
2 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
17
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Part Package Code |
|
AXIAL DIODE
|
| Pin Count |
|
2
|
| Factory Lead Time |
|
20 Weeks
|
| JESD-609 Code |
|
e0
|
| Moisture Sensitivity Level |
|
1
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare ERD32-02 with alternatives
Compare 1N5550 with alternatives